Influence and mutual interaction of process parameters on the Z1/2defect concentration during epitaxy of 4H-SiC

Erlekampf J, Kaminzky D, Rosshirt K, Kallinger B, Rommel M, Berwian P, Friedrich J, Frey L (2018)

Publication Status: Published

Publication Type: Conference contribution

Publication year: 2018

Publisher: Trans Tech Publications Ltd

Pages Range: 112-115

ISBN: 9783035711455

DOI: 10.4028/www.scientific.net/MSF.924.112

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Erlekampf, J., Kaminzky, D., Rosshirt, K., Kallinger, B., Rommel, M., Berwian, P.,... Frey, L. (2018). Influence and mutual interaction of process parameters on the Z1/2defect concentration during epitaxy of 4H-SiC. In Proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 (pp. 112-115). Trans Tech Publications Ltd.

MLA:

Erlekampf, Jürgen, et al. "Influence and mutual interaction of process parameters on the Z1/2defect concentration during epitaxy of 4H-SiC." Proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 Trans Tech Publications Ltd, 2018. 112-115.

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