Electrical properties of schottky-diodes based on B doped diamond
Erlbacher T, Huerner A, Zhu Y, Bach L, Schletz A, Zuerbig V, Pinti L, Kirste L, Giese C, Nebel CE, Bauer AJ, Frey L (2018)
Publication Status: Published
Publication Type: Conference contribution
Publication year: 2018
Publisher: Trans Tech Publications Ltd
Pages Range: 931-934
ISBN: 9783035711455
DOI: 10.4028/www.scientific.net/MSF.924.931
Authors with CRIS profile
Involved external institutions
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
Fraunhofer-Institut für Angewandte Festkörperphysik (IAF) / Fraunhofer Institute for Applied Solid State Physics
Germany (DE)
Germany (DE)
Fraunhofer-Institut für Angewandte Festkörperphysik (IAF) / Fraunhofer Institute for Applied Solid State Physics
Germany (DE)
How to cite
APA:
Erlbacher, T., Huerner, A., Zhu, Y., Bach, L., Schletz, A., Zuerbig, V.,... Frey, L. (2018). Electrical properties of schottky-diodes based on B doped diamond. In Proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 (pp. 931-934). Trans Tech Publications Ltd.
MLA:
Erlbacher, T., et al. "Electrical properties of schottky-diodes based on B doped diamond." Proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 Trans Tech Publications Ltd, 2018. 931-934.
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