Solution Growth of Silicon Carbide Using the Vertical Bridgman Method

Journal article
(Original article)


Publication Details

Author(s): Fahlbusch L, Wellmann P
Journal: Crystal Research and Technology
Publisher: Wiley-VCH Verlag
Publication year: 2018
ISSN: 0232-1300
Language: English


Abstract

A solution growth process combined of vertical Bridgman and vertical gradient freeze in a metal free Si-C melt at growth temperatures of 2300 °C is developed. The influence of the growth parameters for different growth steps and of the surface polarity of the seed is investigated. The layers are evaluated by Raman spectroscopy, scanning electron microscopy and optical profilometry. The growth of high quality SiC layers with a diameter of 30 mm and a layer thickness up to 200 μm is achieved.


FAU Authors / FAU Editors

Fahlbusch, Lars
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


How to cite

APA:
Fahlbusch, L., & Wellmann, P. (2018). Solution Growth of Silicon Carbide Using the Vertical Bridgman Method. Crystal Research and Technology. https://dx.doi.org/10.1002/crat.201800019

MLA:
Fahlbusch, Lars, and Peter Wellmann. "Solution Growth of Silicon Carbide Using the Vertical Bridgman Method." Crystal Research and Technology (2018).

BibTeX: 

Last updated on 2019-04-01 at 05:10