Solution Growth of Silicon Carbide Using the Vertical Bridgman Method

Fahlbusch L, Wellmann P (2018)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2018

Journal

Publisher: Wiley-VCH Verlag

Article Number: 1800019

DOI: 10.1002/crat.201800019

Abstract

A solution growth process combined of vertical Bridgman and vertical gradient freeze in a metal free Si-C melt at growth temperatures of 2300 °C is developed. The influence of the growth parameters for different growth steps and of the surface polarity of the seed is investigated. The layers are evaluated by Raman spectroscopy, scanning electron microscopy and optical profilometry. The growth of high quality SiC layers with a diameter of 30 mm and a layer thickness up to 200 μm is achieved.

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How to cite

APA:

Fahlbusch, L., & Wellmann, P. (2018). Solution Growth of Silicon Carbide Using the Vertical Bridgman Method. Crystal Research and Technology. https://dx.doi.org/10.1002/crat.201800019

MLA:

Fahlbusch, Lars, and Peter Wellmann. "Solution Growth of Silicon Carbide Using the Vertical Bridgman Method." Crystal Research and Technology (2018).

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