Practical aspects of ion beam analysis of semiconductor structures

Frey L, Pichler P, Kasko I, Thies I, Lipp S, Streckfuss N, Gong L, Ryssel H (1994)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1994

Journal

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Elsevier

Book Volume: 85

Pages Range: 356-362

DOI: 10.1016/0168-583X(94)95844-0

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Peter Pichler Technische Fakultät Heiner Ryssel Technische Fakultät

How to cite

APA:

Frey, L., Pichler, P., Kasko, I., Thies, I., Lipp, S., Streckfuss, N.,... Ryssel, H. (1994). Practical aspects of ion beam analysis of semiconductor structures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 85, 356-362. https://dx.doi.org/10.1016/0168-583X(94)95844-0

MLA:

Frey, Lothar, et al. "Practical aspects of ion beam analysis of semiconductor structures." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85 (1994): 356-362.

BibTeX: Download