High energy implantation of 10B and 11B into (100) silicon in channel and in random direction

Bogen S, Gong L, Frey L, Ryssel H (1993)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1993

Journal

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Elsevier

Pages Range: 659-662

DOI: 10.1016/0168-583X(93)96203-O

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

How to cite

APA:

Bogen, S., Gong, L., Frey, L., & Ryssel, H. (1993). High energy implantation of 10B and 11B into (100) silicon in channel and in random direction. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 659-662. https://dx.doi.org/10.1016/0168-583X(93)96203-O

MLA:

Bogen, S., et al. "High energy implantation of 10B and 11B into (100) silicon in channel and in random direction." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1993): 659-662.

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