High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen

Journal article
(Original article)


Publication Details

Author(s): Frey L, Bogen S, Gong L, Jung W, Ryssel H, Gyulai J
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Publication year: 1992
Volume: 62
Journal issue: 3
Pages range: 410-415
ISSN: 0168-583X


FAU Authors / FAU Editors

Frey, Lothar Prof. Dr.
Lehrstuhl für Elektronische Bauelemente
Ryssel, Heiner Prof. Dr.
Technische Fakultät


How to cite

APA:
Frey, L., Bogen, S., Gong, L., Jung, W., Ryssel, H., & Gyulai, J. (1992). High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62(3), 410-415. https://dx.doi.org/10.1016/0168-583X(92)95267-U

MLA:
Frey, Lothar, et al. "High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 62.3 (1992): 410-415.

BibTeX: 

Last updated on 2019-06-03 at 12:23