High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen

Frey L, Bogen S, Gong L, Jung W, Ryssel H, Gyulai J (1992)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1992

Journal

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Elsevier

Book Volume: 62

Pages Range: 410-415

Journal Issue: 3

DOI: 10.1016/0168-583X(92)95267-U

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

How to cite

APA:

Frey, L., Bogen, S., Gong, L., Jung, W., Ryssel, H., & Gyulai, J. (1992). High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62(3), 410-415. https://doi.org/10.1016/0168-583X(92)95267-U

MLA:

Frey, Lothar, et al. "High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 62.3 (1992): 410-415.

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