Chiral Index Dependence of the G(+) and G(-) Raman Modes in Semiconducting Carbon Nanotubes

Telg H, Duque JG, Staiger M, Tu X, Hennrich F, Kappes MM, Zheng M, Maultzsch J, Thomsen C, Doorn SK (2012)


Publication Status: Published

Publication Type: Journal article

Publication year: 2012

Journal

Publisher: AMER CHEMICAL SOC

Book Volume: 6

Pages Range: 904-911

Journal Issue: 1

DOI: 10.1021/nn2044356

Abstract

Raman spectroscopy on the radial breathing mode Is a common tool to determine the diameter d or chiral indices (n,m) of single-wall carbon nanotubes. In this work we present an alternative technique to determine d and (n,m) based on the high-energy G(-) mode. From resonant Raman scattering experiments on 14 highly purified single chirality (n,m) samples we obtain the diameter, chiral angle, and family dependence of the G(-) and G(+) peak position. Considering theoretical predictions we discuss the origin of these dependences with respect to rehybridization of the carbon orbitals, confinement, and electron-electron interactions. The relative Raman intensities of the two peaks have a systematic chiral angle dependence in agreement with theories considering the symmetry of nanotubes and the associated phonons.

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APA:

Telg, H., Duque, J.G., Staiger, M., Tu, X., Hennrich, F., Kappes, M.M.,... Doorn, S.K. (2012). Chiral Index Dependence of the G(+) and G(-) Raman Modes in Semiconducting Carbon Nanotubes. Acs Nano, 6(1), 904-911. https://doi.org/10.1021/nn2044356

MLA:

Telg, Hagen, et al. "Chiral Index Dependence of the G(+) and G(-) Raman Modes in Semiconducting Carbon Nanotubes." Acs Nano 6.1 (2012): 904-911.

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