Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2- b ][1]benzothiophene Semiconductor Layer

Journal article
(Report)


Publication Details

Author(s): Amin AY, Khassanov A, Reuter K, Meyer-Friedrichsen T, Halik M
Journal: Journal of the American Chemical Society
Publication year: 2012
Volume: 134
Journal issue: 40
Pages range: 16548-16550
ISSN: 0002-7863
Language: English


Abstract

An asymmetric n-alkyl substitution pattern was realized in 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene (C13-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm2/(V·s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT π-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.


FAU Authors / FAU Editors

Yousefi Amin, Atefeh
Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe)
Halik, Marcus Prof. Dr.
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Khassanov, Artöm
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


External institutions
Heraeus Precious Metals GmbH & Co. KG


How to cite

APA:
Amin, A.Y., Khassanov, A., Reuter, K., Meyer-Friedrichsen, T., & Halik, M. (2012). Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2- b ][1]benzothiophene Semiconductor Layer. Journal of the American Chemical Society, 134(40), 16548-16550. https://dx.doi.org/10.1021/ja307802q

MLA:
Amin, Atefeh Y., et al. "Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2- b ][1]benzothiophene Semiconductor Layer." Journal of the American Chemical Society 134.40 (2012): 16548-16550.

BibTeX: 

Last updated on 2018-10-08 at 13:55