Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2- b ][1]benzothiophene Semiconductor Layer
Amin AY, Khassanov A, Reuter K, Meyer-Friedrichsen T, Halik M (2012)
Publication Language: English
Publication Type: Journal article, Report
Publication year: 2012
Journal
Book Volume: 134
Pages Range: 16548-16550
Journal Issue: 40
URI: http://pubs.acs.org/doi/abs/10.1021/ja307802q
DOI: 10.1021/ja307802q
Abstract
An asymmetric n-alkyl substitution pattern was realized in 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene (C13-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm2/(V·s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT π-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.
Authors with CRIS profile
Atefeh Yousefi Amin
Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe)
Artöm Khassanov
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Marcus Halik
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Additional Organisation(s)
Involved external institutions
Germany (DE)How to cite
APA:
Amin, A.Y., Khassanov, A., Reuter, K., Meyer-Friedrichsen, T., & Halik, M. (2012). Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2- b ][1]benzothiophene Semiconductor Layer. Journal of the American Chemical Society, 134(40), 16548-16550. https://dx.doi.org/10.1021/ja307802q
MLA:
Amin, Atefeh Y., et al. "Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2- b ][1]benzothiophene Semiconductor Layer." Journal of the American Chemical Society 134.40 (2012): 16548-16550.
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