Variation of self-seeded germanium nanowire electronic device functionality due to synthesis condition determined surface states

Beitrag in einer Fachzeitschrift
(Letter)


Details zur Publikation

Autor(en): Connaughton S, Hobbs R, Lotty O, Holmes JD, Krstic V
Zeitschrift: Advanced Materials Interfaces
Verlag: WILEY-VCH Verlag GmbH & Co. KGaA
Jahr der Veröffentlichung: 2015
Band: 2
ISSN: 2196-7350
Sprache: Englisch


Abstract


An approach to direct the intrinsic electronic transport properties of self-seeded germanium nanowires at room temperature by in situ synthesis conditions is presented. The electrical response is varied between quasi-metallic and p-type semiconductors with memristive signatures. Electron transfer between nanowire core and core–shell surface states governs both conduction regimes and a simplified developed model reproduces the main memristive features.



FAU-Autoren / FAU-Herausgeber

Krstic, Vojislav Prof. Dr.
Professur für Angewandte Physik


Autor(en) der externen Einrichtung(en)
Trinity College Dublin
University College Cork (UCC)


Zitierweisen

APA:
Connaughton, S., Hobbs, R., Lotty, O., Holmes, J.D., & Krstic, V. (2015). Variation of self-seeded germanium nanowire electronic device functionality due to synthesis condition determined surface states. Advanced Materials Interfaces, 2. https://dx.doi.org/10.1002/admi.2014004

MLA:
Connaughton, Stephen, et al. "Variation of self-seeded germanium nanowire electronic device functionality due to synthesis condition determined surface states." Advanced Materials Interfaces 2 (2015).

BibTeX: 

Zuletzt aktualisiert 2018-17-10 um 20:10