Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering

Journal article


Publication Details

Author(s): Müller R, Künecke U, Thuaire A, Mermoux M, Pons M, Wellmann P
Journal: Physica Status Solidi C: Conferences
Publisher: Wiley - V C H Verlag GmbbH & Co.
Publishing place: Weinheim
Publication year: 2006
Volume: 3
Journal issue: 3
Conference Proceedings Title: Physica Status Solidi C: Conferences 3, No.3
Pages range: 558-561
ISSN: 1610-1634
Language: English


Abstract


in the production of highly aluminum doped SiC bulk crystals, a need arises for a fast and simple method to estimate the hole concentration in the material for process control and optimization. An approach for a characterization method using Raman spectroscopy is presented. We established a calibration curve along with an empirical function to determine the charge carrier concentration in p-type SiC from the line width of a linear optical phonon - plasmon coupled (LOPC) mode. At charge carrier concentrations below 10(18) cm(-3), a good precision with a relative error of 10 to 15 % for the hole concentration can be obtained. At charge carrier concentrations of p > 10(19) cm(-3), the relative error rises to 50 % for p because of the low signal/noise ratio in the LOPC spectra. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.


FAU Authors / FAU Editors

Künecke, Ulrike Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

Institut National Polytechnique de Grenoble - Grenoble Institute of Technology


How to cite

APA:
Müller, R., Künecke, U., Thuaire, A., Mermoux, M., Pons, M., & Wellmann, P. (2006). Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering. Physica Status Solidi C: Conferences, 3(3), 558-561. https://dx.doi.org/10.1002/pssc.200564148

MLA:
Müller, Ralf, et al. "Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering." Physica Status Solidi C: Conferences 3.3 (2006): 558-561.

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Last updated on 2018-20-09 at 13:57