Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering

Müller R, Künecke U, Thuaire A, Mermoux M, Pons M, Wellmann P (2006)

Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2006

Journal

Physica Status Solidi C: Conferences Wiley - V C H Verlag GmbbH & Co.

Publisher: Wiley - V C H Verlag GmbbH & Co.

City/Town: Weinheim

Book Volume: 3

Pages Range: 558-561

Conference Proceedings Title: Physica Status Solidi C: Conferences 3, No.3

Journal Issue: 3

DOI: 10.1002/pssc.200564148

Abstract

in the production of highly aluminum doped SiC bulk crystals, a need arises for a fast and simple method to estimate the hole concentration in the material for process control and optimization. An approach for a characterization method using Raman spectroscopy is presented. We established a calibration curve along with an empirical function to determine the charge carrier concentration in p-type SiC from the line width of a linear optical phonon - plasmon coupled (LOPC) mode. At charge carrier concentrations below 10(18) cm(-3), a good precision with a relative error of 10 to 15 % for the hole concentration can be obtained. At charge carrier concentrations of p > 10(19) cm(-3), the relative error rises to 50 % for p because of the low signal/noise ratio in the LOPC spectra. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

Authors with CRIS profile

Ulrike Künecke Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Institut National Polytechnique de Grenoble - Grenoble Institute of Technology FR France (FR)

How to cite

APA:

Müller, R., Künecke, U., Thuaire, A., Mermoux, M., Pons, M., & Wellmann, P. (2006). Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering. Physica Status Solidi C: Conferences, 3(3), 558-561. https://dx.doi.org/10.1002/pssc.200564148

MLA:

Müller, Ralf, et al. "Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering." Physica Status Solidi C: Conferences 3.3 (2006): 558-561.

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