Growth of silicon carbide bulk crystals with a modified physical vapor transport technique

Journal article


Publication Details

Author(s): Müller R, Künecke U, Queren D, Sakwe A, Wellmann P
Journal: Chemical Vapor Deposition
Publisher: Wiley-VCH Verlag
Publication year: 2006
Volume: 12
Journal issue: 8-9
Pages range: 557-561
ISSN: 0948-1907
Language: English


Abstract


In this paper, the development of the modified physical vapor transport (M-PVT) method for SiC bulk crystal growth is reviewed. For this technique, elements from CVD are combined with the conventional PVT (physical vapor transport) method to achieve a better process and particularly dopant control. To this end, an additional gas flow is introduced directly into the growth chamber of a PVT growth system. For stable crystal growth it is important that the additional gas flow is of the same order of magnitude as the SiC-species flow by sublimation. Doping experiments resulted in phosphorous concentrations up to 1.5 x 10(18) cm(-3) and aluminum concentrations up to 1.3 x 10(20) cm(-3) using a PH3-flow and a solid aluminum source in an external reservoir as dopant source, respectively. Also, the growth of a crystal with alternating p- and n-type regions for the investigation of the charge carrier-dependant dislocation evolution in SiC is presented to illustrate the outstanding flexibility that is offered by the M-PVT method.



FAU Authors / FAU Editors

Künecke, Ulrike Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


How to cite

APA:
Müller, R., Künecke, U., Queren, D., Sakwe, A., & Wellmann, P. (2006). Growth of silicon carbide bulk crystals with a modified physical vapor transport technique. Chemical Vapor Deposition, 12(8-9), 557-561. https://dx.doi.org/10.1002/cvde.200606474

MLA:
Müller, Ralf, et al. "Growth of silicon carbide bulk crystals with a modified physical vapor transport technique." Chemical Vapor Deposition 12.8-9 (2006): 557-561.

BibTeX: 

Last updated on 2018-10-08 at 06:24