Müller R, Künecke U, Queren D, Sakwe A, Wellmann P (2006)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2006
Publisher: Wiley-VCH Verlag
Book Volume: 12
Pages Range: 557-561
Journal Issue: 8-9
In this paper, the development of the modified physical vapor transport (M-PVT) method for SiC bulk crystal growth is reviewed. For this technique, elements from CVD are combined with the conventional PVT (physical vapor transport) method to achieve a better process and particularly dopant control. To this end, an additional gas flow is introduced directly into the growth chamber of a PVT growth system. For stable crystal growth it is important that the additional gas flow is of the same order of magnitude as the SiC-species flow by sublimation. Doping experiments resulted in phosphorous concentrations up to 1.5 x 10(18) cm(-3) and aluminum concentrations up to 1.3 x 10(20) cm(-3) using a PH3-flow and a solid aluminum source in an external reservoir as dopant source, respectively. Also, the growth of a crystal with alternating p- and n-type regions for the investigation of the charge carrier-dependant dislocation evolution in SiC is presented to illustrate the outstanding flexibility that is offered by the M-PVT method.
APA:
Müller, R., Künecke, U., Queren, D., Sakwe, A., & Wellmann, P. (2006). Growth of silicon carbide bulk crystals with a modified physical vapor transport technique. Chemical Vapor Deposition, 12(8-9), 557-561. https://dx.doi.org/10.1002/cvde.200606474
MLA:
Müller, Ralf, et al. "Growth of silicon carbide bulk crystals with a modified physical vapor transport technique." Chemical Vapor Deposition 12.8-9 (2006): 557-561.
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