In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction

Journal article
(Original article)


Publication Details

Author(s): Wellmann P, Konias K, Hens P, Hock R, Magerl A
Journal: Materials Science Forum
Publication year: 2009
Volume: 615-617
Conference Proceedings Title: Materials Science Forum Vols. 615-617
Pages range: 23-26
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


This work reports on the in-situ observation of a polytype switch during physical vapor transport (PVT) growth of bulk SiC crystals by x-ray diffraction. A standard PVT reactor for 2 '' and 3 '' bulk growth was set up in a high-energy x-ray diffraction lab. Due to the high penetration depth of the high-energy x-ray beam no modification of the PVT reactor was necessary in order to measure Laue diffraction patterns of the growing crystal with good signal to noise ratio. We report for the first time upon the in-situ observation of polytype switching during SiC bulk PVT growth.


FAU Authors / FAU Editors

Hens, Philip
Graduiertenzentrum der FAU
Hock, Rainer Prof. Dr.
Professur für Kristallographie und Strukturphysik
Konias, Katja
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


How to cite

APA:
Wellmann, P., Konias, K., Hens, P., Hock, R., & Magerl, A. (2009). In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction. Materials Science Forum, 615-617, 23-26. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.23

MLA:
Wellmann, Peter, et al. "In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction." Materials Science Forum 615-617 (2009): 23-26.

BibTeX: 

Last updated on 2018-13-08 at 13:53