Nucleation Control of Cubic Silicon Carbide on 6H-Substrates

Journal article


Publication Details

Author(s): Vasiliauskas R, Marinova M, Hens P, Wellmann P, Syvajarvi M, Yakimova R
Journal: Crystal Growth & Design
Publisher: American Chemical Society
Publication year: 2012
Volume: 12
Journal issue: 1
Pages range: 197-204
ISSN: 1528-7483
Language: English


Abstract


The nucleation of cubic (3C) SiC on on-axis 6H-SiC was investigated in the temperature range 1500-1775 degrees C by the technique of sublimation epitaxy. We have studied two different cases: (i) the initial homoepitaxial growth of 6H-SiC followed by nucleation of 3C-SiC and (ii) nucleation of homoepitaxial 6H-SiC islands. The supersaturation in the growth cell was calculated using the modeled source to substrate temperature difference. We show that, at low temperature and supersaturation, growth of 6H-SiC commences in spiral growth mode, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation is high enough, the 3C-SiC nucleates as two-dimensional islands on terraces of the homoepitaxial 6H-SiC. Detailed structural study indicates that the 3C-SiC began to grow on defect free surfaces. From the experimental and modeling results, we show that the growth parameter window for 3C-SiC is rather narrow. Deviation from it can result in 6H-SiC growth in spiral or 2D-nucleation mode, which suggests the importance of knowledge of supersaturation.



FAU Authors / FAU Editors

Hens, Philip
Graduiertenzentrum der FAU
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

Aristotle University of Thessaloniki
Linköping University


How to cite

APA:
Vasiliauskas, R., Marinova, M., Hens, P., Wellmann, P., Syvajarvi, M., & Yakimova, R. (2012). Nucleation Control of Cubic Silicon Carbide on 6H-Substrates. Crystal Growth & Design, 12(1), 197-204. https://dx.doi.org/10.1021/cg200929r

MLA:
Vasiliauskas, Remigijus, et al. "Nucleation Control of Cubic Silicon Carbide on 6H-Substrates." Crystal Growth & Design 12.1 (2012): 197-204.

BibTeX: 

Last updated on 2018-08-08 at 13:53