Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond

Edmonds MT, Pakes CI, Mammadov S, Zhang W, Tadich A, Ristein J, Ley L (2011)

Publication Type: Journal article

Publication year: 2011

Journal

Applied Physics Letters American Institute of Physics (AIP)

Publisher: American Institute of Physics (AIP)

Book Volume: 88

Pages Range: 102101

DOI: 10.1063/1.3561760

Abstract

Simultaneous measurements of work function (φ) and C 1s core level shift were employed to determine the change in electron affinity (X) and band bending as a function of hole sheet density on H-terminated diamond for atmospheric and fullerene (C60 F48) induced surface conductivity. Contrary to earlier investigations, it is shown that changes in work function do not reflect variations in the position of the surface Fermi level in response to surface transfer doping. Instead, with a transition from -0.96 to -0.33 eV, X accounts for a significant amount of the change in φ for hole densities between 5× 108 and 4× 1013 cm-2. © 2011 American Institute of Physics.

Authors with CRIS profile

Samir Mammadov Lehrstuhl für Laserphysik Jürgen Ristein Lehrstuhl für Laserphysik Lothar Ley Naturwissenschaftliche Fakultät

Involved external institutions

La Trobe University AU Australia (AU)

How to cite

APA:

Edmonds, M.T., Pakes, C.I., Mammadov, S., Zhang, W., Tadich, A., Ristein, J., & Ley, L. (2011). Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond. Applied Physics Letters, 88, 102101. https://dx.doi.org/10.1063/1.3561760

MLA:

Edmonds, M. T., et al. "Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond." Applied Physics Letters 88 (2011): 102101.

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