Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques

Journal article
(Original article)


Publication Details

Author(s): Kumar S, Sarau G, Tessarek C, Göbelt M, Christiansen S, Singh R
Journal: Nanotechnology
Publisher: Institute of Physics Publishing
Publication year: 2015
Volume: 26
Journal issue: 33
ISSN: 1361-6528
Language: English


Abstract


High quality single crystalline zinc gallate (ZnGa2O4) nanowires (NWs) were grown using a combination of chemical vapor deposition and atomic layer deposition techniques. Morphological, structural and optical investigations revealed the formation of Ga2O3-ZnO core-shell NWs and their conversion into ZnGa2O4 NWs after annealing via a solid state reaction. This material conversion was systematically confirmed for single NWs by various measurement techniques including scanning and transmission electron microscopy, Raman spectroscopy and voltage-dependent cathodoluminescence. Moreover, a model system based on the obtained results has been provided explaining the formation mechanism of the ZnGa2O4 NWs.




Additional Organisation
Graduiertenkolleg 1896/2 In situ Mikroskopie mit Elektronen, Röntgenstrahlen und Rastersonden
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)


External institutions with authors

Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)
Indian Institute of Technology (IIT), Delhi
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light


How to cite

APA:
Kumar, S., Sarau, G., Tessarek, C., Göbelt, M., Christiansen, S., & Singh, R. (2015). Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques. Nanotechnology, 26(33). https://dx.doi.org/10.1088/0957-4484/26/33/335603

MLA:
Kumar, Sudheer, et al. "Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques." Nanotechnology 26.33 (2015).

BibTeX: 

Last updated on 2019-03-06 at 16:47