Starodub E, Maier S, Stass I, Bartelt NC, Feibelman PJ, Salmeron M, McCarty K (2009)
Publication Status: Published
Publication Type: Journal article
Publication year: 2009
Publisher: AMER PHYSICAL SOC
Book Volume: 80
Journal Issue: 23
DOI: 10.1103/PhysRevB.80.235422
Low-energy electron microscopy reveals a mode of graphene growth on Ru(0001) in which Ru atoms are etched from a step edge and injected under a growing graphene sheet. Based on density-functional calculations, we propose a model wherein injected Ru atoms form metastable islands under the graphene. Scanning tunneling microscopy reveals that dislocation networks exist near step edges, consistent with some of the injected atoms being incorporated into the topmost Ru layer, thereby increasing its density.
APA:
Starodub, E., Maier, S., Stass, I., Bartelt, N.C., Feibelman, P.J., Salmeron, M., & McCarty, K. (2009). Graphene growth by metal etching on Ru(0001). Physical Review B, 80(23). https://dx.doi.org/10.1103/PhysRevB.80.235422
MLA:
Starodub, Elena, et al. "Graphene growth by metal etching on Ru(0001)." Physical Review B 80.23 (2009).
BibTeX: Download