Improving the Performance of Organic Thin-Film Transistors by Ion Doping of Ethylene-Glycol-Based Self-Assembled Monolayer Hybrid Dielectrics

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Details zur Publikation

Autor(en): Dietrich H, Scheiner S, Portilla Berlanga L, Zahn D, Halik M
Zeitschrift: Advanced Materials
Jahr der Veröffentlichung: 2015
Band: 27
Heftnummer: 48
Seitenbereich: 8023-8027
ISSN: 0935-9648
Sprache: Englisch


Abstract

Tuning the electrostatics of ethylene-glycol-based self-assembled monolayers (SAMs) by doping with ions is shown. Molecular dynamics simulations unravel binding mechanisms and predict dipole strengths of the doped layers. Additionally, by applying such layers as dielectrics in organic thin-film transistors, the incorporated ions are proven to enhance device performance by lowering the threshold voltage and increasing conductivity.


FAU-Autoren / FAU-Herausgeber

Dietrich, Hanno
Computer-Chemie-Centrum
Halik, Marcus Prof. Dr.
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Portilla Berlanga, Luis
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Scheiner, Simon
Professur für Werkstoffwissenschaften (Polymerwerkstoffe)
Zahn, Dirk Prof. Dr.
Professur für Theoretische Chemie


Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Dietrich, H., Scheiner, S., Portilla Berlanga, L., Zahn, D., & Halik, M. (2015). Improving the Performance of Organic Thin-Film Transistors by Ion Doping of Ethylene-Glycol-Based Self-Assembled Monolayer Hybrid Dielectrics. Advanced Materials, 27(48), 8023-8027. https://dx.doi.org/10.1002/adma.201503911

MLA:
Dietrich, Hanno, et al. "Improving the Performance of Organic Thin-Film Transistors by Ion Doping of Ethylene-Glycol-Based Self-Assembled Monolayer Hybrid Dielectrics." Advanced Materials 27.48 (2015): 8023-8027.

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Zuletzt aktualisiert 2019-14-03 um 12:55