On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs

Journal article
(Letter)


Publication Details

Author(s): Pobegen G, Weiße J, Hauck M, Weber HB, Krieger M
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publication year: 2016
Volume: 858
Journal issue: 473
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


FAU Authors / FAU Editors

Hauck, Martin
Lehrstuhl für Angewandte Physik
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik
Weiße, Julietta
Lehrstuhl für Elektronische Bauelemente


How to cite

APA:
Pobegen, G., Weiße, J., Hauck, M., Weber, H.B., & Krieger, M. (2016). On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs. Materials Science Forum, 858(473). https://dx.doi.org/10.4028/www.scientific.net/MSF.858.473

MLA:
Pobegen, Gregor, et al. "On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs." Materials Science Forum 858.473 (2016).

BibTeX: 

Last updated on 2018-13-07 at 21:23