Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation

Journal article


Publication Details

Author(s): Ochedowski O, Marinov K, Wilbs G, Keller G, Scheuschner N, Severin D, Bender M, Maultzsch J, Tegude FJ, Schleberger M
Journal: Journal of Applied Physics
Publisher: AMER INST PHYSICS
Publication year: 2013
Volume: 113
Journal issue: 21
ISSN: 0021-8979


Abstract


We have investigated the deterioration of field effect transistors based on two-dimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were characterized before and after irradiation with 1.14 GeV U28+ ions using three different fluences. By electrical characterization, atomic force microscopy, and Raman spectroscopy, we show that the irradiation leads to significant changes of structural and electrical properties. At the highest fluence of 4 x 10(11) ions/cm(2), the MoS2 transistor is destroyed, while the graphene based device remains operational, albeit with an inferior performance. (C) 2013 AIP Publishing LLC.



FAU Authors / FAU Editors

Maultzsch, Janina Prof. Dr.
Lehrstuhl für Experimentalphysik


External institutions with authors

GSI Helmholtzzentrum für Schwerionenforschung GmbH
Technische Universität Berlin
Universität Duisburg-Essen (UDE)


How to cite

APA:
Ochedowski, O., Marinov, K., Wilbs, G., Keller, G., Scheuschner, N., Severin, D.,... Schleberger, M. (2013). Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation. Journal of Applied Physics, 113(21). https://dx.doi.org/10.1063/1.4808460

MLA:
Ochedowski, O., et al. "Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation." Journal of Applied Physics 113.21 (2013).

BibTeX: 

Last updated on 2018-08-08 at 10:38