A High-Linearity Broadband 55-77 GHz Differential Low-Noise Amplifier with 20 dB Gain in SiGe Technology

Conference contribution


Publication Details

Author(s): Kissinger D, Aufinger K, Meister T, Maurer L, Weigel R
Publisher: IEEE
Publication year: 2010
Conference Proceedings Title: Asia-Pacific Microwave Conference (APMC 2010)
Pages range: 1501-1504
ISBN: 978-1-4244-7590-2


Abstract

This paper presents a broadband differential current re-use low-noise amplifier with 30\% fractional bandwidth at a center frequency of 66 GHz. The circuit has been manufactured in an advanced SiGe:C HBT technology with ft/fmax = 220/285 GHz. The amplifier is unconditionally stable and achieves a maximum differential gain of 19.7 dB while operating over a 3-dB bandwidth of 22 GHz. At the upper corner frequency of 77 GHz the amplifier exhibits a noise figure of 5.8 dB and linearity measurements show a 1-dB output referred compression point above +3 dBm. The circuit consumes 40 mW from a 3.3 V supply and occupies a chip area of 728 × 728 μm2 including bond pads.


FAU Authors / FAU Editors

Kissinger, Dietmar Prof. Dr.-Ing.
Lehrstuhl für Technische Elektronik
Weigel, Robert Prof. Dr.-Ing.
Lehrstuhl für Technische Elektronik


External institutions with authors

Infineon Technologies AG
Universität der Bundeswehr München


How to cite

APA:
Kissinger, D., Aufinger, K., Meister, T., Maurer, L., & Weigel, R. (2010). A High-Linearity Broadband 55-77 GHz Differential Low-Noise Amplifier with 20 dB Gain in SiGe Technology. In Asia-Pacific Microwave Conference (APMC 2010) (pp. 1501-1504). Yokohama, Japan: IEEE.

MLA:
Kissinger, Dietmar, et al. "A High-Linearity Broadband 55-77 GHz Differential Low-Noise Amplifier with 20 dB Gain in SiGe Technology." Proceedings of the Asia-Pacific Microwave Conference (APMC 2010), Yokohama, Japan IEEE, 2010. 1501-1504.

BibTeX: 

Last updated on 2018-25-08 at 07:12