A High-Linearity Broadband 55-77 GHz Differential Low-Noise Amplifier with 20 dB Gain in SiGe Technology

Kissinger D, Aufinger K, Meister T, Maurer L, Weigel R (2010)

Publication Type: Conference contribution

Publication year: 2010

Publisher: IEEE

Pages Range: 1501-1504

Conference Proceedings Title: Asia-Pacific Microwave Conference (APMC 2010)

Event location: Yokohama, Japan

ISBN: 978-1-4244-7590-2

URI: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5728168

Abstract

This paper presents a broadband differential current re-use low-noise amplifier with 30\% fractional bandwidth at a center frequency of 66 GHz. The circuit has been manufactured in an advanced SiGe:C HBT technology with ft/fmax = 220/285 GHz. The amplifier is unconditionally stable and achieves a maximum differential gain of 19.7 dB while operating over a 3-dB bandwidth of 22 GHz. At the upper corner frequency of 77 GHz the amplifier exhibits a noise figure of 5.8 dB and linearity measurements show a 1-dB output referred compression point above +3 dBm. The circuit consumes 40 mW from a 3.3 V supply and occupies a chip area of 728 × 728 μm2 including bond pads.

Authors with CRIS profile

Dietmar Kissinger Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik

Involved external institutions

Infineon Technologies AG DE Germany (DE) Universität der Bundeswehr München DE Germany (DE)

How to cite

APA:

Kissinger, D., Aufinger, K., Meister, T., Maurer, L., & Weigel, R. (2010). A High-Linearity Broadband 55-77 GHz Differential Low-Noise Amplifier with 20 dB Gain in SiGe Technology. In Asia-Pacific Microwave Conference (APMC 2010) (pp. 1501-1504). Yokohama, Japan: IEEE.

MLA:

Kissinger, Dietmar, et al. "A High-Linearity Broadband 55-77 GHz Differential Low-Noise Amplifier with 20 dB Gain in SiGe Technology." Proceedings of the Asia-Pacific Microwave Conference (APMC 2010), Yokohama, Japan IEEE, 2010. 1501-1504.

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