Dynamics of exciton formation at the Si(100) c(4x2) surface

Journal article


Publication Details

Author(s): Weinelt M, Kutschera M, Fauster T, Rohlfing M
Journal: Physical Review Letters
Publisher: American Physical Society
Publication year: 2004
Volume: 92
ISSN: 0031-9007
eISSN: 1079-7114


Abstract


Carrier recombination at the Si(100) c(4x2) surface and the underlying surface electronic structure is unraveled by a combination of two-photon photoemission and many-body perturbation theory: An electron excited to the silicon conduction band by a femtosecond infrared laser pulse scatters within 220 ps to the unoccupied surface band, needs 1.5 ps to jump to the band bottom via emission of optical phonons, and finally relaxes within 5 ps with an excited hole in the occupied surface band to form an exciton living for nanoseconds.



FAU Authors / FAU Editors

Fauster, Thomas Prof. Dr.
Lehrstuhl für Festkörperphysik


External institutions with authors

Jacobs University Bremen gGmbH


How to cite

APA:
Weinelt, M., Kutschera, M., Fauster, T., & Rohlfing, M. (2004). Dynamics of exciton formation at the Si(100) c(4x2) surface. Physical Review Letters, 92. https://dx.doi.org/10.1103/PhysRevLett.92.126801

MLA:
Weinelt, Martin, et al. "Dynamics of exciton formation at the Si(100) c(4x2) surface." Physical Review Letters 92 (2004).

BibTeX: 

Last updated on 2019-09-09 at 14:08