Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires

Beitrag in einer Fachzeitschrift
(Letter)


Details zur Publikation

Autorinnen und Autoren: Kolesnik-Gray M, Lutz T, Collins G, Biswas S, Holmes JD, Krstic V
Zeitschrift: Applied Physics Letters
Verlag: American Institute of Physics (AIP)
Jahr der Veröffentlichung: 2013
Band: 103
ISSN: 0003-6951
Sprache: Englisch


Abstract


Electrical properties of contact-interfaces in germanium nanowire field effect transistor devices are studied. In contrast to planar bulk devices, it is shown that the active conduction channel and gate length extend between and underneath the contact electrodes. Furthermore, direct scaling of contact resistivity and Schottky barrier height with electrode metal function is observed. The associated pinning parameter was found to be gamma = 0.65 ± 0.03, which demonstrates a significant suppression of Fermi level pinning in quasi-one-dimensional structures.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Kolesnik-Gray, Maria Dr.
Lehrstuhl für Angewandte Physik
Krstic, Vojislav Prof. Dr.
Professur für Angewandte Physik


Einrichtungen weiterer Autorinnen und Autoren

Trinity College Dublin
University College Cork (UCC)


Zitierweisen

APA:
Kolesnik-Gray, M., Lutz, T., Collins, G., Biswas, S., Holmes, J.D., & Krstic, V. (2013). Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires. Applied Physics Letters, 103. https://dx.doi.org/10.1063/1.4821996

MLA:
Kolesnik-Gray, Maria, et al. "Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires." Applied Physics Letters 103 (2013).

BibTeX: 

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