Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires

Journal article
(Letter)


Publication Details

Author(s): Kolesnik-Gray M, Lutz T, Collins G, Biswas S, Holmes JD, Krstic V
Journal: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publication year: 2013
Volume: 103
ISSN: 0003-6951
Language: English


Abstract


Electrical properties of contact-interfaces in germanium nanowire field effect transistor devices are studied. In contrast to planar bulk devices, it is shown that the active conduction channel and gate length extend between and underneath the contact electrodes. Furthermore, direct scaling of contact resistivity and Schottky barrier height with electrode metal function is observed. The associated pinning parameter was found to be gamma = 0.65 ± 0.03, which demonstrates a significant suppression of Fermi level pinning in quasi-one-dimensional structures.



FAU Authors / FAU Editors

Kolesnik-Gray, Maria Dr.
Lehrstuhl für Angewandte Physik
Krstic, Vojislav Prof. Dr.
Professur für Angewandte Physik


How to cite

APA:
Kolesnik-Gray, M., Lutz, T., Collins, G., Biswas, S., Holmes, J.D., & Krstic, V. (2013). Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires. Applied Physics Letters, 103. https://dx.doi.org/10.1063/1.4821996

MLA:
Kolesnik-Gray, Maria, et al. "Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires." Applied Physics Letters 103 (2013).

BibTeX: 

Last updated on 2018-19-04 at 03:06