Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

Journal article


Publication Details

Author(s): Sakwe A, Stockmeier M, Hens P, Müller R, Queren D, Künecke U, Konias K, Hock R, Magerl A, Pons M, Winnacker A, Wellmann P
Journal: physica status solidi (b)
Publisher: Wiley-VCH Verlag
Publication year: 2008
Volume: 245
Journal issue: 7
Pages range: 1239-1256
ISSN: 0370-1972
eISSN: 1521-3951
Language: English


Abstract


The paper reviews research on advanced crystal growth of SiC. A brief review highlights the benefits of the so called Modified Physical Vapor Transport Technique which uses an additional gas pipe for fine tuning of the growth cell of a conventional Physical Vapor Transport setup with additional gases. Main emphasis, however, will be laid on a systematic dislocation evolution study for various growth parameter sets. Besides doping, growth temperature was considered. Two main results were found: (i) In p-type SiC, irrespective of the incorporation of aluminum or boron acceptors, basal plane dislocations that are harmful for bipolar power devices appear less pronounced or are even absent compared to n-type SiC. (ii) Growth at elevated seed temperature (i.e. 2300 degrees C and higher) is beneficial for low dislocation densities. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.



FAU Authors / FAU Editors

Hens, Philip
Graduiertenzentrum der FAU
Hock, Rainer Prof. Dr.
Professur für Kristallographie und Strukturphysik
Konias, Katja
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Künecke, Ulrike Dr.-Ing.
Institute Materials for Electronics and Energy Technology (i-MEET)
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Winnacker, Albrecht Prof. Dr.
Technische Fakultät


External institutions
Institut National Polytechnique de Grenoble - Grenoble Institute of Technology


How to cite

APA:
Sakwe, A., Stockmeier, M., Hens, P., Müller, R., Queren, D., Künecke, U.,... Wellmann, P. (2008). Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution. physica status solidi (b), 245(7), 1239-1256. https://dx.doi.org/10.1002/pssb.200743520

MLA:
Sakwe, Aloysius, et al. "Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution." physica status solidi (b) 245.7 (2008): 1239-1256.

BibTeX: 

Last updated on 2018-19-09 at 15:53