Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy

Journal article
(Original article)


Publication Details

Author(s): Hupfer T, Hens P, Kaiser M, Jokubavicius V, Syväjärvi M, Wellmann P
Editor(s): Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publishing place: Switzerland
Publication year: 2013
Volume: 740-742
Conference Proceedings Title: Materials Science Forum (Volumes 740-742)
Pages range: 52-55
ISBN: 9783037856246
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


Two growth regions with different limitation of growth speed are observed in the fast sublimation growth process of silicon carbide. Using suggested theoretical model for the mean free path calculations, the influences of temperature and inert gas pressure on the mass transport for the growth of epitaxial layers were considered theoretically and confirmed by experimental data. © (2013) Trans Tech Publications, Switzerland.


FAU Authors / FAU Editors

Hens, Philip
Graduiertenzentrum der FAU
Hupfer, Thomas
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Kaiser, Michl
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

Linköping University


How to cite

APA:
Hupfer, T., Hens, P., Kaiser, M., Jokubavicius, V., Syväjärvi, M., & Wellmann, P. (2013). Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy. Materials Science Forum, 740-742, 52-55. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.52

MLA:
Hupfer, Thomas, et al. "Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy." Materials Science Forum 740-742 (2013): 52-55.

BibTeX: 

Last updated on 2018-20-09 at 14:02