Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy
Hupfer T, Hens P, Kaiser M, Jokubavicius V, Syväjärvi M, Wellmann P (2013)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2013
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 740-742
Pages Range: 52-55
Conference Proceedings Title: Materials Science Forum (Volumes 740-742)
Event location: St. Petersburg
ISBN: 9783037856246
DOI: 10.4028/www.scientific.net/MSF.740-742.52
Abstract
Two growth regions with different limitation of growth speed are observed in the fast sublimation growth process of silicon carbide. Using suggested theoretical model for the mean free path calculations, the influences of temperature and inert gas pressure on the mass transport for the growth of epitaxial layers were considered theoretically and confirmed by experimental data. © (2013) Trans Tech Publications, Switzerland.
Authors with CRIS profile
Thomas Hupfer
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Philip Hens
Graduiertenzentrum der FAU
Michl Kaiser
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Sweden (SE)How to cite
APA:
Hupfer, T., Hens, P., Kaiser, M., Jokubavicius, V., Syväjärvi, M., & Wellmann, P. (2013). Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy. Materials Science Forum, 740-742, 52-55. https://doi.org/10.4028/www.scientific.net/MSF.740-742.52
MLA:
Hupfer, Thomas, et al. "Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy." Materials Science Forum 740-742 (2013): 52-55.
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