Design of a High-Speed Digital Interface for Multi-Standard Mobile Transceiver RFICs in 0.13 µm CMOS
Chabrak K, Bachmann F, Hueber G, Seemann K, Maurer L, Boos Z, Weigel R (2005)
Publication Type: Conference contribution
Publication year: 2005
Pages Range: 217-220
Conference Proceedings Title: European Conference on Wireless Technology
Event location: Paris, France
DOI: 10.1109/ECWT.2005.1617696
Abstract
This paper presents the design of two different digital interfaces, both based on current signalling. First the requirements for a digital interface at the baseband output of a multi-standard mobile phone RF front-end are explained. The paper gives an insight of the popular digital interfaces and presents a new concept which is more robust against the ground bounce effect. At the end measurement results of a realized test chip are shown.
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Germany (DE)How to cite
APA:
Chabrak, K., Bachmann, F., Hueber, G., Seemann, K., Maurer, L., Boos, Z., & Weigel, R. (2005). Design of a High-Speed Digital Interface for Multi-Standard Mobile Transceiver RFICs in 0.13 µm CMOS. In European Conference on Wireless Technology (pp. 217-220). Paris, France.
MLA:
Chabrak, Karim, et al. "Design of a High-Speed Digital Interface for Multi-Standard Mobile Transceiver RFICs in 0.13 µm CMOS." Proceedings of the European Conference on Wireless Technology, Paris, France 2005. 217-220.
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