Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs
Albrecht M, Erlbacher T, Bauer A, Frey L (2016)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2016
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 858
Pages Range: 821-824
ISBN: 9783035710427
DOI: 10.4028/www.scientific.net/MSF.858.821
Abstract
In this work, the impact of the n-well doping concentration on the channel mobility and threshold voltage of p-MOSFETs and their applications in CMOS-devices is evaluated. For this purpose lateral p-channel MOSFETs with different channel lengths (L = 800 μm, 10 μm, 5 μm, and 3 μm) and doping concentrations (N= 10cmand 8·10cm) were fabricated and the respective field-effect mobility was extracted from the transfer-characteristics. Comparable to n- MOSFETs the mobility of p-MOSFETs was found to be the highest for the lowest doping concentration in the channel and the absolute value of the threshold voltage increases with increasing doping concentration [3]. To investigate its suitability for CMOS applications, inverters with different doping concentrations for n-MOSFET (N= 10cmand 10cm) und p- MOSFET (N= 10cmand 8·10cm) were built. For logic levels of 0 V and 10 V, the voltage transfer characteristic with the highest input range was obtained for a low p-MOSFET and a high n- MOSFET doping concentration. The lowest propagation delay time could be achieved with a low p- MOSFET and a low n-MOSFET doping concentration. For temperatures up to 300 °C the drain current of p-MOSFETs with channel lengths below 3 μm is hampered by the series resistance of the source and drain region which limits the high-frequency performance of CMOS devices.
Authors with CRIS profile
Matthäus Albrecht
Lehrstuhl für Elektronische Bauelemente
Lothar Frey
Lehrstuhl für Elektronische Bauelemente
Involved external institutions
Germany (DE)How to cite
APA:
Albrecht, M., Erlbacher, T., Bauer, A., & Frey, L. (2016). Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs. Materials Science Forum, 858, 821-824. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.821
MLA:
Albrecht, Matthäus, et al. "Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs." Materials Science Forum 858 (2016): 821-824.
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