Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration

Matthus C, Erlbacher T, Schöfer B, Bauer A, Frey L (2017)


Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2017

Journal

Publisher: Trans Tech Publications Ltd

Pages Range: 618-621

Journal Issue: 897

ISBN: 9783035710434

DOI: 10.4028/www.scientific.net/MSF.897.618

Abstract

The usability of 4H-SiC pin-diodes as nearly linear temperature sensors up to 800 K is demonstrated. Two sensor concepts were evaluated including the constant current forward bias (CCFB) concept and the integrated proportional to absolute temperature (PTAT) concept. The maximum sensitivity was 4.5 mV/K for the CCFB and an applied current density of 118 nA/cm. Additionally, this device can be used for UV detection, too, demonstrating the feasibility of 4H-SiC multi-sensor integration.

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How to cite

APA:

Matthus, C., Erlbacher, T., Schöfer, B., Bauer, A., & Frey, L. (2017). Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration. Materials Science Forum, 897, 618-621. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.618

MLA:

Matthus, Christian, et al. "Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration." Materials Science Forum 897 (2017): 618-621.

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