Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology
Seemann K, Ramberger S, Tessmann A, Quay R, Schneider J, Rießle M, Walcher H, Kuri M, Kiefer R, Schlechtweg M (2003)
Publication Type: Conference contribution
Publication year: 2003
Publisher: IEEE Computer Society
Edited Volumes: Conference Proceedings - 33rd European Microwave Conference, EuMC 2003
Pages Range: 383-386
Event location: München
DOI: 10.1109/EUMC.2003.1262299
Abstract
In this paper, flip-chip integration is demonstrated as a method for faster progress towards a GaN MMIC technology by separating the development of active devices and passive matching circuits. This approach offers distinct advantages in the verification of passive components realized on a 2" SiC substrate. A proven 0.3μm GaAs PHEMT technology was used for the transistors that allowed to reproducibly verify both, the flip-chip transitions and the behaviour of the coplanar SiC structures. As an example, three X-band amplifiers in flip-chip technology are presented that demonstrate the feasibility of the technology. © 2003 EUMA.
Involved external institutions
Germany (DE)How to cite
APA:
Seemann, K., Ramberger, S., Tessmann, A., Quay, R., Schneider, J., Rießle, M.,... Schlechtweg, M. (2003). Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology. In Proceedings of the 33rd European Microwave Conference (pp. 383-386). München: IEEE Computer Society.
MLA:
Seemann, Kay, et al. "Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology." Proceedings of the 33rd European Microwave Conference, München IEEE Computer Society, 2003. 383-386.
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