Design and Breakdown Behavior of 77GHz Variable Gain Power Amplifiers in SiGe- Technology

Conference contribution


Publication Details

Author(s): Borutta K, Lämmle B, Wagner C, Maurer L, Weigel R, Kissinger D
Publication year: 2013
Conference Proceedings Title: European Microwave Conference (EuMC), 2013
Pages range: 1543-1546


Abstract


This paper presents two fully integrated differential programmable power amplifiers for automotive radar applications at 77GHz. The power amplifiers were fabricated in a silicon-germanium technology featuring bipolar transistors with an ft/fmax of 200GHz/250GHz. Measurements have been performed for different temperatures, in particular at -40°, 27° and 125°. A maximum gain of 10 dB is achieved for both amplifiers at room temperature. In addition the breakdown behavior of both amplifiers has been investigated. The building blocks of the amplifiers, which are affected by the breakdown effect had been indentified and design guidelines to avoid breakdown effects in power amplifiers are presented.



FAU Authors / FAU Editors

Borutta, Karl
Lehrstuhl für Technische Elektronik
Lehrstuhl für Technische Elektronik
Kissinger, Dietmar Prof. Dr.-Ing.
Lehrstuhl für Technische Elektronik
Lämmle, Benjamin Dr.
Weigel, Robert Prof. Dr.-Ing.
Lehrstuhl für Technische Elektronik


External institutions with authors

Universität der Bundeswehr München


How to cite

APA:
Borutta, K., Lämmle, B., Wagner, C., Maurer, L., Weigel, R., & Kissinger, D. (2013). Design and Breakdown Behavior of 77GHz Variable Gain Power Amplifiers in SiGe- Technology. In European Microwave Conference (EuMC), 2013 (pp. 1543-1546). Nuremberg, DE.

MLA:
Borutta, Karl, et al. "Design and Breakdown Behavior of 77GHz Variable Gain Power Amplifiers in SiGe- Technology." Proceedings of the European Microwave Conference (EuMC), 2013, Nuremberg, DE 2013. 1543-1546.

BibTeX: 

Last updated on 2018-10-08 at 13:54