Interface formation during silica encapsulation of colloidal CdSe/CdS quantum dots observed by in situ Raman spectroscopy

Biermann A, Aubert T, Baumeister P, Drijvers E, Hens Z, Maultzsch J (2017)


Publication Status: Published

Publication Type: Journal article

Publication year: 2017

Journal

Publisher: AMER INST PHYSICS

Book Volume: 146

Journal Issue: 13

DOI: 10.1063/1.4979515

Abstract

We investigate the encapsulation of CdSe/CdS quantum dots (QDs) in a silica shell by in situ Raman spectroscopy and find a distinct shift of the CdS Raman signal during the first hours of the synthesis. This shift does not depend on the final silica shell thickness but on the properties of the initial core-shell QD. We find a correlation between the Raman shift rate and the speed of the silica formation and attribute this to the changing configuration of the outermost layers of the QD shell, where an interface to the newly formed silica is created. This dependence of Raman shift rate on the speed of silica formation process will give rise to many possible studies concerning the growth mechanism in the water-in-oil microemulsion, rendering in situ Raman a valuable instrument in monitoring this type of reaction. Published by AIP Publishing.

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APA:

Biermann, A., Aubert, T., Baumeister, P., Drijvers, E., Hens, Z., & Maultzsch, J. (2017). Interface formation during silica encapsulation of colloidal CdSe/CdS quantum dots observed by in situ Raman spectroscopy. Journal of Chemical Physics, 146(13). https://dx.doi.org/10.1063/1.4979515

MLA:

Biermann, Amelie, et al. "Interface formation during silica encapsulation of colloidal CdSe/CdS quantum dots observed by in situ Raman spectroscopy." Journal of Chemical Physics 146.13 (2017).

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