Klieber R, Ramisch R, Weigel R, Dill R, Valenzuela A, Russer P, Schwab M (1991)
Publication Type: Conference contribution
Publication year: 1991
Pages Range: 923-926
Conference Proceedings Title: IEEE International Electron Devices Meeting (IEDM), 1991
Event location: Washington, DC, USA
A small-size coplanar oscillator has been designed and entirely fabricated on a 10-mm*10-mm/sup 2/ LaAlO/sub 3/ substrate in superconducting microwave integrated circuit (SMIC) technology. As an active element, a GaAs MESFET has been used. The oscillator is stabilized by a coplanar waveguide transmission line resonator patterned from a YBa/sub 2/Cu/sub 3/O/sub 7-x/ film onto the LaAlO/sub 3/ substrate. The oscillator, operating at 77 K, is characterized by a center frequency of 6.5 GHz and a power output of nearly 5 dBm. A single-sideband phase noise to carrier ratio of -90 dBc/Hz at 10-kHz offset has been attained. The attenuation of harmonics is better than 10 dBc.<>
APA:
Klieber, R., Ramisch, R., Weigel, R., Dill, R., Valenzuela, A., Russer, P., & Schwab, M. (1991). High-Temperature Superconducting Resonator-Stabilized Coplanar Hybrid-Integrated Oscillator at 6.5 GHz. In IEEE International Electron Devices Meeting (IEDM), 1991 (pp. 923-926). Washington, DC, USA.
MLA:
Klieber, Ralf, et al. "High-Temperature Superconducting Resonator-Stabilized Coplanar Hybrid-Integrated Oscillator at 6.5 GHz." Proceedings of the IEEE International Electron Devices Meeting (IEDM), 1991, Washington, DC, USA 1991. 923-926.
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