Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100)

Journal article
(Original article)


Publication Details

Author(s): Hens P, Wagner G, Hölzing A, Hock R, Wellmann P
Journal: Materials Science Forum
Publication year: 2010
Volume: 645-648
Conference Proceedings Title: Materials Science Forum (Volumes 645-648)
Pages range: 151-154
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


Usually a waiting step at around 1000 degrees C to 1100 degrees C during the carbonization step for 3C-SiC on silicon is implemented for establishing a closed carbon layer to prevent the formation of voids. The latter, however, may lead to non-ideal nucleation conditions for high quality layers with a low density of domain boundaries. Our investigations indicate that a continuous ramp-up as fast as possible with no waiting step would be preferable. The worst layer quality, as measured by peak intensity and FWHM of the (200) reflection of 3C-SiC, can be found at a temperature of about 1000 degrees C, which indicates that here the nucleation rate would be the highest. So longer periods within this temperature range should be avoided by applying high ramping speeds during the carbonization step.


FAU Authors / FAU Editors

Hens, Philip
Graduiertenzentrum der FAU
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


How to cite

APA:
Hens, P., Wagner, G., Hölzing, A., Hock, R., & Wellmann, P. (2010). Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100). Materials Science Forum, 645-648, 151-154. https://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.151

MLA:
Hens, Philip, et al. "Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100)." Materials Science Forum 645-648 (2010): 151-154.

BibTeX: 

Last updated on 2018-09-08 at 09:23