Production of nitrogen-doped graphene by low-energy nitrogen implantation

Journal article


Publication Details

Author(s): Zhao W, Höfert O, Gotterbarm K, Zhu J, Papp C, Steinrück HP
Journal: Journal of Physical Chemistry C
Publisher: American Chemical Society
Publication year: 2012
Volume: 116
Journal issue: 8
Pages range: 5062-5066
ISSN: 1932-7447
eISSN: 1932-7455


Abstract


Nitrogen doping of graphene is a suitable route to tune the electronic structure of graphene, leading to n-type conductive materials. Herein, we report a simple way to insert nitrogen atoms into graphene by low-energy nitrogen bombardment, forming nitrogen-doped graphene. The formation of nitrogen-doped graphene is investigated with high resolution X-ray photoelectron spectroscopy, allowing to determine the doping level and to identify two different carbon-nitrogen species. By application of different ion implantation energies and times, we demonstrate that a doping level of up to 0.05 monolayers is achievable and that the branching ratio of the two nitrogen species can be varied. © 2012 American Chemical Society.



FAU Authors / FAU Editors

Gotterbarm, Karin
Lehrstuhl für Physikalische Chemie II
Höfert, Oliver
Lehrstuhl für Physikalische Chemie II
Papp, Christian PD Dr.
Lehrstuhl für Physikalische Chemie II
Steinrück, Hans-Peter Prof. Dr.
Lehrstuhl für Physikalische Chemie II
Zhao, Wei
Lehrstuhl für Physikalische Chemie II


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


External institutions with authors

University of Science and Technology of China (USTC)


Research Fields

D Catalytic Materials
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Zhao, W., Höfert, O., Gotterbarm, K., Zhu, J., Papp, C., & Steinrück, H.-P. (2012). Production of nitrogen-doped graphene by low-energy nitrogen implantation. Journal of Physical Chemistry C, 116(8), 5062-5066. https://dx.doi.org/10.1021/jp209927m

MLA:
Zhao, Wei, et al. "Production of nitrogen-doped graphene by low-energy nitrogen implantation." Journal of Physical Chemistry C 116.8 (2012): 5062-5066.

BibTeX: 

Last updated on 2019-06-08 at 09:05