Production of nitrogen-doped graphene by low-energy nitrogen implantation

Zhao W, Höfert O, Gotterbarm K, Zhu J, Papp C, Steinrück HP (2012)

Publication Type: Journal article

Publication year: 2012

Journal

Original Authors: Zhao W., Höfert O., Gotterbarm K., Zhu J.F., Papp C., Steinrück H.-P.

Publisher: American Chemical Society

Book Volume: 116

Pages Range: 5062-5066

Journal Issue: 8

DOI: 10.1021/jp209927m

Abstract

Nitrogen doping of graphene is a suitable route to tune the electronic structure of graphene, leading to n-type conductive materials. Herein, we report a simple way to insert nitrogen atoms into graphene by low-energy nitrogen bombardment, forming nitrogen-doped graphene. The formation of nitrogen-doped graphene is investigated with high resolution X-ray photoelectron spectroscopy, allowing to determine the doping level and to identify two different carbon-nitrogen species. By application of different ion implantation energies and times, we demonstrate that a doping level of up to 0.05 monolayers is achievable and that the branching ratio of the two nitrogen species can be varied. © 2012 American Chemical Society.

Authors with CRIS profile

Additional Organisation(s)

Involved external institutions

University of Science and Technology of China (USTC) China (CN)

How to cite

APA:

Zhao, W., Höfert, O., Gotterbarm, K., Zhu, J., Papp, C., & Steinrück, H.-P. (2012). Production of nitrogen-doped graphene by low-energy nitrogen implantation. Journal of Physical Chemistry C, 116(8), 5062-5066. https://dx.doi.org/10.1021/jp209927m

MLA:

Zhao, Wei, et al. "Production of nitrogen-doped graphene by low-energy nitrogen implantation." Journal of Physical Chemistry C 116.8 (2012): 5062-5066.

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