Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

Beitrag in einer Fachzeitschrift
(Letter)


Details zur Publikation

Autor(en): Hertel S, Waldmann D, Jobst J, Albert A, Albrecht M, Krieger M, Reshanov S, Schöner A, Weber HB
Zeitschrift: Nature Communications
Verlag: Nature Publishing Group: Nature Communications
Jahr der Veröffentlichung: 2012
Band: 3
Seitenbereich: 957
ISSN: 2041-1723


Abstract


Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.



FAU-Autoren / FAU-Herausgeber

Albrecht, Matthäus
Lehrstuhl für Angewandte Physik
Hertel, Stefan
Lehrstuhl für Angewandte Physik
Jobst, Johannes
Lehrstuhl für Angewandte Physik
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Waldmann, Daniel
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


Autor(en) der externen Einrichtung(en)
Acreo AB


Zitierweisen

APA:
Hertel, S., Waldmann, D., Jobst, J., Albert, A., Albrecht, M., Krieger, M.,... Weber, H.B. (2012). Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics. Nature Communications, 3, 957. https://dx.doi.org/10.1038/ncomms1955

MLA:
Hertel, Stefan, et al. "Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics." Nature Communications 3 (2012): 957.

BibTeX: 

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