Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

Hertel S, Waldmann D, Jobst J, Albert A, Albrecht M, Krieger M, Reshanov S, Schöner A, Weber HB (2012)

Publication Type: Journal article, Letter

Publication year: 2012

Journal

Nature Communications Nature Publishing Group: Nature Communications

Original Authors: Hertel S, Waldmann D, Jobst J, Albert A, Albrecht M, Reshanov S, Schöner A, Krieger M, Weber HB

Publisher: Nature Publishing Group: Nature Communications

Book Volume: 3

Pages Range: 957

DOI: 10.1038/ncomms1955

Abstract

Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

Authors with CRIS profile

Stefan Hertel Chair of Applied Physics Daniel Waldmann Chair of Applied Physics Johannes Jobst Chair of Applied Physics Matthäus Albrecht Chair of Applied Physics Michael Krieger Chair of Applied Physics Heiko Weber Chair of Applied Physics

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Related research project(s)

Monolithic electronic circuits based on epitaxial graphene Dec. 1, 2013 - Dec. 1, 2016

Involved external institutions

Acreo AB SE Sweden (SE)

How to cite

APA:

Hertel, S., Waldmann, D., Jobst, J., Albert, A., Albrecht, M., Krieger, M.,... Weber, H.B. (2012). Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics. Nature Communications, 3, 957. https://dx.doi.org/10.1038/ncomms1955

MLA:

Hertel, Stefan, et al. "Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics." Nature Communications 3 (2012): 957.

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