Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition

Sledziewski T, Beljakowa S, Alassaad K, Kwasnicki P, Arvinte R, Juillaguet S, Zielinski M, Souliere V, Ferro G, Weber HB, Krieger M (2014)

Publication Language: English

Publication Type: Journal article, Original article

Publication year: 2014

Journal

Publisher: Trans Tech Publications

Book Volume: 778-780

Pages Range: 261-264

DOI: 10.4028/www.scientific.net/MSF.778-780.261

Abstract

We have investigated the electrical properties of n-type 4H-SiC in-situ germanium-doped homoepitaxial layers grown by chemical vapor deposition. Germanium is an isoelectronic impurity and, therefore, not expected to contribute to the conductivity. However, Hall effect measurements taken on samples with and without germanium revealed an enhanced mobility by a factor of ≈2 at T ≈ 55 K in the germanium-doped sample despite equal free electron concentration and equal compensation. Deep level transient spectroscopy (DLTS) measurements taken on germanium-doped samples reveal negative peaks indicating the presence of charged extended defects. © (2014) Trans Tech Publications, Switzerland.

Authors with CRIS profile

Involved external institutions

Université Claude Bernard Lyon 1 (UCB) France (FR) University of Montpellier / Université Montpellier France (FR) NOVASiC France (FR)

How to cite

APA:

Sledziewski, T., Beljakowa, S., Alassaad, K., Kwasnicki, P., Arvinte, R., Juillaguet, S.,... Krieger, M. (2014). Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition. Materials Science Forum, 778-780, 261-264. https://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.261

MLA:

Sledziewski, Tomasz, et al. "Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition." Materials Science Forum 778-780 (2014): 261-264.

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