Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition

Journal article
(Original article)


Publication Details

Author(s): Sledziewski T, Beljakowa S, Alassaad K, Kwasnicki P, Arvinte R, Juillaguet S, Zielinski M, Souliere V, Ferro G, Weber HB, Krieger M
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publication year: 2014
Volume: 778-780
Pages range: 261-264
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


We have investigated the electrical properties of n-type 4H-SiC in-situ germanium-doped homoepitaxial layers grown by chemical vapor deposition. Germanium is an isoelectronic impurity and, therefore, not expected to contribute to the conductivity. However, Hall effect measurements taken on samples with and without germanium revealed an enhanced mobility by a factor of ≈2 at T ≈ 55 K in the germanium-doped sample despite equal free electron concentration and equal compensation. Deep level transient spectroscopy (DLTS) measurements taken on germanium-doped samples reveal negative peaks indicating the presence of charged extended defects. © (2014) Trans Tech Publications, Switzerland.



FAU Authors / FAU Editors

Beljakowa, Svetlana Dr.
Lehrstuhl für Angewandte Physik
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Sledziewski, Tomasz
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


How to cite

APA:
Sledziewski, T., Beljakowa, S., Alassaad, K., Kwasnicki, P., Arvinte, R., Juillaguet, S.,... Krieger, M. (2014). Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition. Materials Science Forum, 778-780, 261-264. https://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.261

MLA:
Sledziewski, Tomasz, et al. "Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition." Materials Science Forum 778-780 (2014): 261-264.

BibTeX: 

Last updated on 2018-19-04 at 02:47