Waldmann D, Jobst J, Speck F, Seyller T, Krieger M, Weber HB (2011)
Publication Type: Journal article, Letter
Publication year: 2011
Publisher: Nature Publishing Group
Book Volume: 10
Pages Range: 357-360
DOI: 10.1038/nmat2988
High-quality epitaxial graphene on silicon carbide (SiC) is today available in wafer size. Similar to exfoliated graphene, its charge carriers are governed by the Dirac-Weyl Hamiltonian and it shows excellent mobilities. For many experiments with graphene, in particular for surface science, a bottom gate is desirable. Commonly, exfoliated graphene flakes are placed on an oxidized silicon wafer that readily provides a bottom gate. However, this cannot be applied to epitaxial graphene as the SiC provides the source material out of which graphene grows. Here, we present a reliable scheme for the fabrication of bottom-gated epitaxial graphene devices, which is based on nitrogen (N) implantation into a SiC wafer and subsequent graphene growth. We demonstrate working devices in a broad temperature range from 6 to 300-K. Two gating regimes can be addressed, which opens a wide engineering space for tailored devices by controlling the doping of the gate structure. © 2011 Macmillan Publishers Limited. All rights reserved.
APA:
Waldmann, D., Jobst, J., Speck, F., Seyller, T., Krieger, M., & Weber, H.B. (2011). Bottom-gated epitaxial graphene. Nature Materials, 10, 357-360. https://dx.doi.org/10.1038/nmat2988
MLA:
Waldmann, Daniel, et al. "Bottom-gated epitaxial graphene." Nature Materials 10 (2011): 357-360.
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