Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

Journal article


Publication Details

Author(s): Emtsev K, Bostwick A, Horn K, Jobst J, Kellogg GL, Ley L, McChesney J, Ohta T, Reshanov S, Röhrl J, Rotenberg E, Schmid A, Waldmann D, Weber HB, Seyller T
Journal: Nature Materials
Publisher: Nature Publishing Group
Publication year: 2009
Volume: 8
Pages range: 203-207
ISSN: 1476-1122


Abstract


Graphene, a single monolayer of graphite, has recently attracted considerable interest owing to its novel magneto-transport properties, high carrier mobility and ballistic transport up to room temperature. It has the potential for technological applications as a successor of silicon in the post Moore's law era, as a single-molecule gas sensor, in spintronics, in quantum computing or as a terahertz oscillator. For such applications, uniform ordered growth of graphene on an insulating substrate is necessary. The growth of graphene on insulating silicon carbide (SiC) surfaces by high-temperature annealing in vacuum was previously proposed to open a route for large-scale production of graphene-based devices. However, vacuum decomposition of SiC yields graphene layers with small grains (30-200 nm; refs 14-16). Here, we show that the ex situ graphitization of Si-terminated SiC(0001) in an argon atmosphere of about 1 bar produces monolayer graphene films with much larger domain sizes than previously attainable. Raman spectroscopy and Hall measurements confirm the improved quality of the films thus obtained. High electronic mobilities were found, which reach =2,000 cm 2 V 1 s 1 at T=27 K. The new growth process introduced here establishes a method for the synthesis of graphene films on a technologically viable basis.



FAU Authors / FAU Editors

Jobst, Johannes
Lehrstuhl für Angewandte Physik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Seyller, Thomas PD Dr.
Naturwissenschaftliche Fakultät
Waldmann, Daniel
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Emtsev, K., Bostwick, A., Horn, K., Jobst, J., Kellogg, G.L., Ley, L.,... Seyller, T. (2009). Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nature Materials, 8, 203-207. https://dx.doi.org/10.1038/NMAT2382

MLA:
Emtsev, Konstantin, et al. "Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide." Nature Materials 8 (2009): 203-207.

BibTeX: 

Last updated on 2018-19-04 at 02:47