Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors

Journal article


Publication Details

Author(s): Krieger M, Beljakowa S, Trapaidze L, Frank T, Weber HB, Pensl G, Hatta N, Abe M, Nagasawa H, Schöner A
Journal: Physica Status Solidi B-Basic Solid State Physics
Publisher: Wiley-VCH Verlag
Publication year: 2008
Volume: 245
Journal issue: 7
Pages range: 1390-1395
ISSN: 0370-1972
eISSN: 1521-3951


Abstract


3C-SiC/SiO2 capacitors are fabricated by over-oxidation of an implanted Gaussian nitrogen (N) profile and investigated by conductance spectroscopy. An unexpected double peak structure is observed in the conductance spectra indicating two types of independent traps at different energy positions in the bandgap, which change their charge state with identical time constant. A theoretical model is developed assuming two independent distributions of interface traps in the bandgap of 3C-SiC with different trap parameters. The experimental G/ω-V and C-V spectra are simulated and the trap parameters are determined on the basis of this model. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.



FAU Authors / FAU Editors

Beljakowa, Svetlana Dr.
Lehrstuhl für Angewandte Physik
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


How to cite

APA:
Krieger, M., Beljakowa, S., Trapaidze, L., Frank, T., Weber, H.B., Pensl, G.,... Schöner, A. (2008). Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors. Physica Status Solidi B-Basic Solid State Physics, 245(7), 1390-1395. https://dx.doi.org/10.1002/pssb.200844062

MLA:
Krieger, Michael, et al. "Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors." Physica Status Solidi B-Basic Solid State Physics 245.7 (2008): 1390-1395.

BibTeX: 

Last updated on 2018-19-04 at 02:47