A DLTS study of hydrogen doped czochralski-grown silicon

Journal article
(Original article)


Publication Details

Author(s): Jelinek M, Laven JG, Kirnstoetter S, Schustereder W, Schulze HJ, Rommel M, Frey L
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Publisher: Elsevier
Publication year: 2015
Volume: 365
Pages range: 240-243
ISSN: 0168-583X
Language: English


Abstract


In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10-15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.


FAU Authors / FAU Editors

Frey, Lothar Prof. Dr.
Lehrstuhl für Elektronische Bauelemente


External institutions with authors

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Infineon Technologies AG
Infineon Technologies Austria AG
Technische Universität Graz


How to cite

APA:
Jelinek, M., Laven, J.G., Kirnstoetter, S., Schustereder, W., Schulze, H.-J., Rommel, M., & Frey, L. (2015). A DLTS study of hydrogen doped czochralski-grown silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 365, 240-243. https://dx.doi.org/10.1016/j.nimb.2015.07.078

MLA:
Jelinek, M., et al. "A DLTS study of hydrogen doped czochralski-grown silicon." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365 (2015): 240-243.

BibTeX: 

Last updated on 2019-11-03 at 14:53