A DLTS study of hydrogen doped czochralski-grown silicon

Jelinek M, Laven JG, Kirnstoetter S, Schustereder W, Schulze HJ, Rommel M, Frey L (2015)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2015

Journal

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Elsevier

Publisher: Elsevier

Book Volume: 365

Pages Range: 240-243

DOI: 10.1016/j.nimb.2015.07.078

Abstract

In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10-15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Infineon Technologies Austria AG AT Austria (AT) Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Infineon Technologies AG DE Germany (DE) Technische Universität Graz AT Austria (AT)

How to cite

APA:

Jelinek, M., Laven, J.G., Kirnstoetter, S., Schustereder, W., Schulze, H.-J., Rommel, M., & Frey, L. (2015). A DLTS study of hydrogen doped czochralski-grown silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 365, 240-243. https://doi.org/10.1016/j.nimb.2015.07.078

MLA:

Jelinek, M., et al. "A DLTS study of hydrogen doped czochralski-grown silicon." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365 (2015): 240-243.

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