A Low-Power Wideband D-Band LNA in a 130 nm BiCMOS Technology for Imaging Applications

Aguilar Mendoza E, Hagelauer AM, Kissinger D, Weigel R (2018)

Publication Language: English

Publication Status: Accepted

Publication Type: Conference contribution, Conference Contribution

Future Publication Type: Conference contribution

Publication year: 2018

Pages Range: 27-29

Event location: Anaheim, California

DOI: 10.1109/SIRF.2018.8304220

Abstract

A Low-power D-Band Low Noise Amplifier (LNA) manufactured in a recent 130 nm SiGe BiCMOS process for imaging applications is presented. The architecture consists of an optimized 3-stage cascode amplifier which achieves a maximum gain of 32.8 dB and a gain>20 dB in the frequency range from 121 to 161 GHz with a DC power consumption of 39.6 mW. The simulated noise figure varies from 6 to 9.7 dB within the range 130 to 140 GHz. To the best of the author’s knowledge, the presented work exhibits the highest gain-bandwidth product with the lowest power consumption for a D-Band amplifier in a 130 nm SiGe technology.

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How to cite

APA:

Aguilar Mendoza, E., Hagelauer, A.M., Kissinger, D., & Weigel, R. (2018). A Low-Power Wideband D-Band LNA in a 130 nm BiCMOS Technology for Imaging Applications. In Proceedings of the Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 27-29). Anaheim, California, US.

MLA:

Aguilar Mendoza, Erick, et al. "A Low-Power Wideband D-Band LNA in a 130 nm BiCMOS Technology for Imaging Applications." Proceedings of the Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Anaheim, California 2018. 27-29.

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