Walz MM, Vollnhals F, Rietzler F, Schirmer M, Steinrück HP, Marbach H (2012)
Publication Type: Journal article
Publication year: 2012
Original Authors: Walz M.-M., Vollnhals F., Rietzler F., Schirmer M., Steinrück H.-P., Marbach H.
Publisher: American Institute of Physics (AIP)
Book Volume: 100
Article Number: 053118
Journal Issue: 5
DOI: 10.1063/1.3681593
A fundamental challenge in lithographic and microscopic techniques employing focused electron beams are so-called proximity effects due to unintended electron emission and scattering in the sample. Herein, we apply a method that allows for visualizing electron induced surface modifications on a SiN substrate covered with a thin native oxide layer by means of iron deposits. Conventional wisdom holds that by using thin membranes proximity effects can be effectively reduced. We demonstrate that, contrary to the expectation, these can be indeed larger on a 200 nm SiN-membrane than on the respective bulk substrate due to charging effects. © 2012 American Institute of Physics.
APA:
Walz, M.-M., Vollnhals, F., Rietzler, F., Schirmer, M., Steinrück, H.-P., & Marbach, H. (2012). Investigation of proximity effects in electron microscopy and lithography. Applied Physics Letters, 100(5). https://dx.doi.org/10.1063/1.3681593
MLA:
Walz, Marie-Madeleine, et al. "Investigation of proximity effects in electron microscopy and lithography." Applied Physics Letters 100.5 (2012).
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